a、 Applicable processes: cold bonding, hot bonding pre sintering, hot bonding sintering and other processes
b、 Suitable products: IGBT, SiC, RF power devices, high-power lasers, etc
c、 Tip features: 360 ° rotation+pressure 30Kg+300 ℃ heating high temperature, pressure and temperature accuracy ± 1%
d、 Platform features: Equipped with 350 ℃ heating, high temperature, vacuum adsorption, and nitrogen protection
e. X/Y accuracy: ± 10um@3 σ
f、 Can produce in line and offline
g、 Equipped with automatic loading and unloading systems such as 8-inch Wafer and 4-inch Tray
h、 Homework area: 400 * 300mm (length * width)